APT10SCD65KCT
Manufacturer:
Microsemi
Category:
Diode Arrays
Description
DIODE SILICON 650V 17A TO220
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Obsolete |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | 17A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 μA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |