RUM001L02T2CL

Manufacturer: ROHM Semiconductor

Description

MOSFET N-CH 20V 100MA VMT3

Technical Parameters

Parameter Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100μA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 7.1 pF @ 10 V
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VMT3
Package / Case SOT-723

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