RU1J002YNTCL

Manufacturer: ROHM Semiconductor

Description

MOSFET N-CH 50V 200MA UMT3F

Technical Parameters

Parameter Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0.9V, 4.5V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 26 pF @ 10 V
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package UMT3F
Package / Case SC-85

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