NVJS4151PT1G

Manufacturer: onsemi

Description

MOSFET P-CH 20V 3.2A SC88

Technical Parameters

Parameter Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 67mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-88/SC70-6/SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363

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