NTF5P03T3G

Manufacturer: onsemi

Description

MOSFET P-CH 30V 3.7A SOT223

Technical Parameters

Parameter Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.56W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA

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