STD5N20LT4

Manufacturer: STMicroelectronics

Description

MOSFET N-CH 200V 5A DPAK

Technical Parameters

Parameter Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 700mOhm @ 2.5A, 5V
Vgs(th) (Max) @ Id 2.5V @ 50μA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 242 pF @ 25 V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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