FDMC510P

Manufacturer: onsemi

Description

MOSFET P-CH 20V 12A/18A 8MLP

Technical Parameters

Parameter Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 7860 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN

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