RFP12N10L

Manufacturer: onsemi

Description

MOSFET N-CH 100V 12A TO220-3

Technical Parameters

Parameter Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 200mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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