RS1E220ATTB1

Manufacturer: ROHM Semiconductor

Description

MOSFET P-CH 30V 22A/76A 8HSOP

Technical Parameters

Parameter Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN

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