RS1E260ATTB1
Manufacturer:
ROHM Semiconductor
Category:
Single FETs, MOSFETs
Description
MOSFET P-CH 30V 26A/80A 8HSOP
$2.96
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7850 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSOP |
| Package / Case | 8-PowerTDFN |