RSJ250P10TL

Manufacturer: ROHM Semiconductor

Description

MOSFET P-CH 100V 25A LPTS

Technical Parameters

Parameter Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LPTS
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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