FDMS86150

Manufacturer: onsemi

Description

MOSFET N CH 100V 16A POWER56

Technical Parameters

Parameter Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4065 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN

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