EFC6601R-TR

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH EFCP

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 2W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFBGA, FCBGA
Supplier Device Package EFCP2718-6CE-020

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