QS8M11TCR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET N/P-CH 30V 3.5A TSMT8

Technical Parameters

Parameter Value
Product Status Not For New Designs
Technology -
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature -
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package TSMT8

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