NTTFD4D1N03P1E

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

FET 30V 4.1MOHM PC33 DUAL SYMM

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 270μA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V, 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1103pF @ 15V, 972pF @ 15V
Power - Max 1W (Ta), 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 12-PowerWQFN
Supplier Device Package 12-WQFN (3.3x3.3)

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