SP8M10FRATB

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

4V DRIVE NCH+PCH MOSFET (AEC-Q10

Technical Parameters

Parameter Value
Product Status Not For New Designs
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V, 850pF @ 10V
Power - Max 2W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

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