HP8MA2TB1

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

HP8MA2 IS LOW ON-RESISTANCE AND

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 15A (Ta)
Rds On (Max) @ Id, Vgs 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V, 1250pF @ 15V
Power - Max 3W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-HSOP

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