TPS1120DR
Manufacturer:
Texas Instruments
Category:
FET, MOSFET Arrays
Description
MOSFET 2P-CH 15V 1.17A 8-SOIC
$2.02
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.17A |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 5.45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 840mW |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |