NTTFD9D0N06HLTWG

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET, POWER, 60V POWERTRENCH P

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 50μA
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 948pF @ 30V
Power - Max 1.7W (Ta), 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 12-PowerWQFN
Supplier Device Package 12-WQFN (3.3x3.3)

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