FDMD8680

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2 N-CH 80V 66A 8-PQFN

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Rds On (Max) @ Id, Vgs 4.7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 40V
Power - Max 39W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-Power 5x6

Industry News