NTTFD4D0N04HLTWG

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET, POWER, 40V POWERTRENCH P

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 50μA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 20V
Power - Max 1.7W (Ta), 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 12-PowerWQFN
Supplier Device Package 12-WQFN (3.3x3.3)

Industry News