FDMD86100
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET 2N-CH 100V 10A 8POWER 5X6
$4.57
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 50V |
| Power - Max | 2.2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-Power 5x6 |