BSM180D12P3C007
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
SIC POWER MODULE
$675.92
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 50mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Power - Max | 880W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Module |
| Supplier Device Package | Module |