HS8MA2TCR1
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
30V DUAL COMMON DRAIN PCH+NCH PO
$1.06
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V, 8.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V, 365pF @ 10V |
| Power - Max | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | DFN3333-9DC |