SH68N65DM6AG
Manufacturer:
STMicroelectronics
Category:
FET, MOSFET Arrays
Description
AUTOMOTIVE-GRADE N-CHANNEL 650 V
$35.46
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 4.75V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 116nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900pF @ 100V |
| Power - Max | 379W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 9-PowerSMD |
| Supplier Device Package | 9-ACEPACK SMIT |