NTJD4105CT1G
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 20V/8V SOT-363
$0.47
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 630mA, 775mA |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 630mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 20V |
| Power - Max | 270mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |