NTJD1155LT1G
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 8V 1.3A SOT363
$0.50
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 400mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |