FDC6333C

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET N/P-CH 30V 2.5A/2A SSOT6

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A, 2A
Rds On (Max) @ Id, Vgs 95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 282pF @ 15V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT?-6

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