NTGD3148NT1G

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 20V 3A 6TSOP

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A
Rds On (Max) @ Id, Vgs 70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Power - Max 900mW
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP

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