FDMQ8203

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2N/2P-CH 100V/80V 12-MLP

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N and 2 P-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V, 80V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.6A
Rds On (Max) @ Id, Vgs 110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V
Power - Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 12-WDFN Exposed Pad
Supplier Device Package 12-MLP (5x4.5)

Industry News