NTJD4158CT1G

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET N/P-CH 30V/20V SOT363

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V, 20V
Current - Continuous Drain (Id) @ 25°C 250mA, 880mA
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V
Power - Max 270mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363

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