US6M2GTR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

2.5V DRIVE NCH+PCH MOSFET, 6 PIN

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V, 20V
Current - Continuous Drain (Id) @ 25°C 1.5A, 1A
Rds On (Max) @ Id, Vgs 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V, 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V, 150pF @ 10V
Power - Max 1W
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Supplier Device Package TUMT6

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