HP8KA1TB

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 30V 14A HSOP8

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14A
Rds On (Max) @ Id, Vgs 5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 15V
Power - Max 3W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-HSOP

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