HP8M31TB1
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
HP8M31TB1 IS LOW ON-RESISTANCE A
$2.42
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V, 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 30V, 2300pF @ 30V |
| Power - Max | 3W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-HSOP |