NTMC083NP10M5L

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

NTMC083NP10M5L

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
Rds On (Max) @ Id, Vgs 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 222pF @ 50V, 525pF @ 50V
Power - Max 1.6W (Ta), 3.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC

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