NTTBC070NP10M5L

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MV5_100V_N_P_IN DUALS AND

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 24μA, 4V @ 40μA
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V, 7.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 252pF @ 50V, 256pF @ 50V
Power - Max 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-WDFN (3x3)

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