SH8ME5TB1

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

100V 4.5A DUAL NCH+PCH, SOP8, PO

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration -
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Rds On (Max) @ Id, Vgs 58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V, 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 50V, 2100pF @ 50V
Power - Max 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

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