NTMFD1D1N02X

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

T10 MOSFET 25V

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V, 870μOhm @ 37A, 10V
Vgs(th) (Max) @ Id 2.1V @ 240μA, 2.1V @ 850μA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V, 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 12V, 4265pF @ 12V
Power - Max 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PQFN (5x6)

Industry News