CSD86336Q3DT

Manufacturer: Texas Instruments
Category: FET, MOSFET Arrays

Description

SYNCHRONOUS BUCK NEXFET POWER BL

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 1.9V @ 250μA, 1.6V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds 494pF @ 12.5V, 970pF @ 12.5V
Power - Max 6W
Operating Temperature -55°C ~ 125°C
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-VSON (3.3x3.3)

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