CSD86356Q5DT

Manufacturer: Texas Instruments
Category: FET, MOSFET Arrays

Description

SYNCHRONOUS BUCK NEXFET POWER BL

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 1.85V @ 250μA, 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12.5V, 2510pF @ 12.5V
Power - Max 12W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-VSON-CLIP (5x6)

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