ADP360120W3

Manufacturer: STMicroelectronics
Category: FET, MOSFET Arrays

Description

AUTOMOTIVE-GRADE ACEPACK DRIVE P

Technical Parameters

Parameter Value
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 379A (Tj)
Rds On (Max) @ Id, Vgs 3.45mOhm @ 360A, 18V
Vgs(th) (Max) @ Id 4.4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 944nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 28070pF @ 800V
Power - Max 704W (Tj)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package ACEPACK

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