TT8M2TR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET N/P-CH 30V/20V 2.5A TSST8

Technical Parameters

Parameter Value
Product Status Not For New Designs
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V, 20V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 90mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Power - Max 1.25W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 8-TSST

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