SH8M13GZETB
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MIDDLE POWER MOSFET SERIES (DUAL
$0.46
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | - |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 7A |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |