HP8S36TB
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
30V NCH+NCH MIDDLE POWER MOSFET,
$0.71
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | - |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 27A, 80A |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 32A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 15V |
| Power - Max | 29W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-HSOP |