A1F25M12W2-F1

Manufacturer: STMicroelectronics
Category: FET, MOSFET Arrays

Description

ACEPACK 1 POWER MODULE, FOURPACK

Technical Parameters

Parameter Value
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 50A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -

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