NDS8852H
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 30V 8SOIC
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A, 3.4A |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |