FDC6506P
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET 2P-CH 30V 1.8A SSOT6
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT?-6 |