NTMD2P01R2G

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2P-CH 16V 2.3A 8SOIC

Technical Parameters

Parameter Value
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 16V
Current - Continuous Drain (Id) @ 25°C 2.3A
Rds On (Max) @ Id, Vgs 100mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Power - Max 710mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC

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