FDMJ1028N
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET 2N-CH 20V 3.2A 6-MICROFET
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 10V |
| Power - Max | 800mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | MicroFET 2x2 Thin |