NVMD6N04R2G

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 40V 4.6A 8-SOIC

Technical Parameters

Parameter Value
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 4.6A
Rds On (Max) @ Id, Vgs 34mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 32V
Power - Max 1.29W
Operating Temperature -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC

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